Abstract
High temperature epitaxial growth has been a long-standing requirement for forming semiconductor thin films with exceptional optoelectronic properties. In this issue of Joule , Brenes and coworkers have demonstrated that atmospheric and photoinduced post-treatments of solution-processed polycrystalline metal halide perovskites can improve the diffusion length, carrier lifetime, and surface recombination velocity to values previously only achievable by single crystal materials.
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