Abstract
AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers’ localization and delocalization in the AlGaN alloy.
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