Abstract
Understanding the development and performance of UV photodetectors is crucial, given their extensive applications in both military and civilian sectors. The evolution of self-powered photodetectors, especially those based on heterojunction nanostructures, has demonstrated significant potential for enhancing both device efficiency and functionality. By exploring the effects of material composition and structural design, can optimize these devices for improved photoelectric response and energy efficiency. In this study, we prepared the CuO/ZnO NRs heterojunction photodetector on an ITO substrate to enhance photoelectric response of UV detectors. The fabrication process utilized the hydrothermal method and the spin coating technique. The effect of CuO concentration on the optical response of the photodetector under UV radiation at wavelengths of 405nm and 385nm was investigated. The samples were characterized using FESSEM, XRD, EDX, and UV-Vis spectra. The device is further distinguished by its standard I-V curves and photocurrent-time curves, which demonstrate the device's behavior under various light conditions. The prepared thin films are polycrystalline, with CuO layers displaying monoclinic phases and ZnO layers exhibiting a hexagonal wurtzite phase. All samples have the potential to exhibit photovoltaic properties and self-powered capabilities. Furthermore, the I-V curve confirms that the photocurrent mechanism of these junctions adheres to the recombination standard, in addition to demonstrating correction behavior. A sample with a CuO concentration of 0.1M shows the highest photosensitivity, reaching 340,700%, and a photocurrent gain (Iph/Idark) of 3,408 when exposed to light irradiation at 405nm. Additionally, it exhibits a rapid response time of 0.8s.
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