Abstract
Highly efficient Cu(In,Ga)Se2 (CIGS) thin film solar cells are often fabricated with a double Ga grading along the thickness direction of the light absorber. In this work, through a progressive procedure of using time-dependent Ga and In deposition rates, it is manifested that how the detailed shape of the double Ga grading profile in terms of the depth of the V-shape, the width of the V-shape, and the spatial position of the minimum bandgap can be experimentally actively manipulated. Moreover, the effect of the aforementioned features of the Ga grading profile on the photo-generated current has been uncovered by the progressive improvement in the spectral response of the external quantum efficiency spectra. Within the effort of our optimization, a CIGS solar cell with a conversion efficiency of 20.3% is obtained, believed to be the best reported for CIGS solar cells without actively using alkali post deposition treatment technology. This work has provided a practical and operable route to actively control the Ga grading profile and turned the fabrication of high efficiency CIGS solar cell from an art to more a science.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
