Abstract
The enhancement of the MQW violet InGaN laser diode (LD) characteristics has numerically been observed by using the quaternary AlInGaN as a blocking layer (BL) instead of the conventional ternary AlxGa1−xN BL in the LD. Simulation results showed that most of the LD characteristics can be enhanced by using the quaternary AlxInyGa1−x−yN BL instead of the conventional ternary AlxGa1−xN BL. The lower threshold current, carrier density, threshold gain and internal loss and higher output power, slop efficiency, internal quantum efficiency and deferential quantum efficiency of the LD with the quaternary AlxInyGa1−x−yN BL have been obtained.
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