Abstract
AbstractThe light extraction efficiency (LEE) of GaN‐based light‐emitting diodes (LEDs) was limited by intense total internal reflection and the photothermal effect. In order to solve this problem, a method to synergistically control the LEE of GaN‐based LEDs by combining the complex‐period photonic crystals (PhCs) with M (M = Al, In) material doping is proposed. The forbidden band width of two‐dimensional (2D) PhC array, three‐dimensional (3D) LED model, M doping, and electromagnetic field distribution are investigated respectively. By doping the M, the LED emission wavelength range is regulated to achieve the dual‐band emission. Furthermore, a triangular complex‐period photonic structure is introduced to establish stacked or etched PhCs models. By combining the plane wave expansion and finite difference time domain algorithm, the structural parameters of PhCs and M concentration dependent LEE are investigated, and the electromagnetic field distribution is explored also. The results show that the optimal LEEs can be achieved are 19.08% and 13.96% for blue light and ultraviolet, respectively, which are larger than that of traditional flat‐panel LED (4%). This work provides theoretical results and technical support for the design of LEDs with high luminous efficiency.
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