Abstract
The organic light‐emitting diodes with triple hole‐blocking layer (THBL) formation sandwich structure which generate white emission were fabricated. The 5,6,11,12‐tetraphenylnapthacene (Rubrene), (4,4′‐N,N′‐dicarbazole)biphenyl (CBP), and 4,4′‐bis(2,2′diphenylvinil)‐1,1′‐biphenyl (DPVBi) were used as emitting materials in the device. The function of CBP layer is not only an emitting layer but also a hole‐blocking layer (HBL), and the Rubrene was doped into the CBP. The optimal configuration structure was indium tin oxide (ITO)/Molybdenum trioxide (MoO3) (5 nm)/[4,4‐bis[N‐(1‐naphthyl)‐N‐phenylamino]biphenyl (NPB) (35 nm)/CBP (HBL1) (5 nm)/DPVBi (I) (10 nm)/CBP (HBL2) : Rubrene (4 : 1) (3 nm)/DPVBi (II) (30 nm)/CBP (HBL3) (2 nm)/4,7‐diphenyl‐1,10‐phenanthroline (BPhen) (10 nm)/Lithium fluoride (LiF)/aluminum (Al). The result showed that the device with Rubrene doped in CBP (HBL2) exhibited a stable white emission with the color coordinates of (0.322, 0.368), and the coordinate with the slight shift of ±Δx, y = (0.001, 0.011) for applied voltage of 8–12 V was observed.
Highlights
The white organic light-emitting diodes (WOLED) have attracted considerable attention in recent years due to their widely used applications such as full-color displays and solid-state lighting sources [1–3]
The result showed that the device with Rubrene doped in CBP (HBL2) exhibited a stable white emission with the color coordinates of (0.322, 0.368), and the coordinate with the slight shift of ±Δ x,y = (0.001, 0.011) for applied voltage of [8,9,10,11,12] V was observed
Among various configurations for WOLED, the multiple hole-blocking layers (HBL) structure has been proved to be an effective approach for high performance of device, by confining charge carriers and exciton within the multiple emitting layers (EML); the charge carrier Journal of Nanomaterials
Summary
The white organic light-emitting diodes (WOLED) have attracted considerable attention in recent years due to their widely used applications such as full-color displays and solid-state lighting sources [1–3]. Among various configurations for WOLED, the multiple hole-blocking layers (HBL) structure has been proved to be an effective approach for high performance of device, by confining charge carriers and exciton within the multiple emitting layers (EML); the charge carrier. The WOLED was obtained by using structure of triple-hole blocking layer (THBL), which consisted of three CBP layers. The CBP layer doped with Rubrene can effectively control the carrier recombination in the emitting layer that will favor the white light emission. We used the THBL structure so that the carrier can be effectively confined and controlled at the interface of CBP/DPVBi, resulting that the CIE color coordinates of devices can be close to the standard CIE of white light emission. The mechanism of devices with different Rubrene doped CBP layers is presented
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