Abstract
In this paper, a white organic light-emitting device (WOLEDs) with multiple-emissive-layer structure has been fabricated. The device has a simple structure of indium tin oxide (ITO)/NPB (20 nm)//DPVBi(20 nm)/CDBP:xIr(btp)2acac(10 nm)/Alq3 (25 nm)/BCP (5 nm)/CsF (1 nm)/Al (150 nm) (x= 0.15, 2.5 and 3.0 wt%), where NPB and BCP are used as the hole-injecting layer, electron transporting and hole blocking layer, respectively. White light emission was realized in an OLED with 2.5% Ir(btp)2acac doping concentration. The device exhibits peak efficiency of 1.93 cd/A at 9 V and maximum brightness of 7005 cd/m2 at 14 V. The Commission International de I’Eclairage (CIE)(1931) coordinates of white emission are well within the white zone, which moves from (0.35,0.33) to (0.26,0.30) when the applied voltage is varied from 5 V to 14 V.
Highlights
White organic light-emitting devices (WOLEDs) have attracted considerable interest in the last decade for their applications as a large size display, a backlight for liquid crystal display, and a light source for general illumination
WOLEDs employing multi-emissive layer structure has advantages over other architectures in terms of efficiency and color controlability because the recombination current, singlet and triplet energy transfer and performance of each layer can be controlled by layer thickness, doping concentration and charge blocking layers
We demonstrate a efficient white organic light emitting devices fabricated by the phosphorescent organic materials
Summary
A white organic light-emitting device (WOLEDs) with multiple-emissive-layer structure has been fabricated. In order to generate the desired white light, WOLEDs with various configurations have been proposed [7-13], such as: (a) a multilayer device with blue, green, and red emission layers; (b) a doped device with a host material and blue, green, and red fluorescence dyes; (c) a single emission layer device with white emission materials; (d) excimer and exciplex emission; and (e) tandem structure [14-23] Among these approaches, WOLEDs employing multi-emissive layer structure has advantages over other architectures in terms of efficiency and color controlability because the recombination current, singlet and triplet energy transfer and performance of each layer can be controlled by layer thickness, doping concentration and charge blocking layers. The active emissive area of the device is 6 mm
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
