Abstract
AbstractIon beam mixing was used to improve the adhesion between deposited Cu film (400 Å) and polyimide (PI) substrate. Ar+ ion with the energy levels between 180 and 200 keV, and the dose between 1014 to 4 × 1016 ions/cm2 were used. The surface analyses were carried out by Rutherford Backscattering Spectroscopy (SEM). RBS analysis, using 2 MeV He+ ions, showed mixing of Cu and FI and the mixing depended on the Ar+ energy and dose. The X‐ray study showed a very broad halo for deposited Cu film but the (111) peak appeared after the Ar+ implantation and the peak increased with Ar+ ion dose. Optical micrographs showed that Cu film formed circular bubbles after many thermal cycles when adhesion was poor and fracture cracks when adhesion was good.
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