Abstract
Inactivation of non-radiative defects by hydrogen and their thermal stabilities in a high-quality floating-zone Si wafer depending on annealing conditions have been studied using in-situ photoluminescence (PL) and thermal desorption under an ultra-high vacuum. The PL intensity increased to ∼400% of its initial value after annealing at 450 °C and decreased to ∼6% of its initial value after annealing at 600 °C due to inactivation and activation of non-radiative defects, respectively. Based on the annealing temperature- and duration-dependence of the PL intensity, we propose two types of hydrogenated defects with different thermal stabilities.
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