Abstract
This research work reflects the effects of 300 keV nickel (Ni) ions beam on the structural, morphological and electrical properties of DLC and Au doped DLC (Au-DLC) thin films. Pure and Au-DLC thin films have been deposited on glass substrate by RF magnetron sputtering. 300 keV Ni ions with exposure rate 2 × 104 and 4 × 104 atoms/cm2 have been implanted in Au-DLC thin films. XRD results show that Au formed cluster in DLC. When Ni ions are implanted in Au-DLC thin film at the exposure rate of 2 × 104 atoms/cm2 then both graphite and diamond like structures are appeared. When the exposure rate has increased upto 4 × 104 atoms/cm2 then film has only graphite nature. SEM shows the formation of agglomeration and clusters of Au and Ni in DLC due to its no bondage at ordinary conditions in DLC thin films. Four point probe shows average resistivity of films is decreased due to doping and implantation of Au and Ni ions, respectively. This work provides a cost effective study of DLC thin film as a conducting layer in many optoelectronic applications such as a counter electrode in dye-sensitized solar cells.
Published Version
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