Abstract
Abstract Effects of annealing temperature (600–800 °C) on microstructure, ferroelectric and piezoelectric properties of Bi 3.15 Dy 0.85 Ti 3 O 12 (BDT) thin films prepared by metal-organic decomposition were studied. The remnant polarization 2 P r and spontaneous polarization 2 P s (16.2 µC/cm 2 and 23.3 µC/cm 2 under 690 kV/cm), effective piezoelectric coefficient d 33 (63 pm/V under the bipolar driving field of 310 kV/cm) of BDT thin film annealed at 700 °C are better than those of others. The higher 2 P s and relatively permittivity e r induced by moderate annealing temperature should be responsible for the enhancement of piezoelectric properties. The improved d 33 may make BDT a promising candidate for piezoelectric thin film devices.
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