Abstract
We report on a new cost effective, with a low temperature budget and simple bonding process on silicon, presenting efficient heat spreading and great potentialities in integration. This process is based on a thick electro-plated copper bonding layer through silicon vias and is expected to reduce significantly the bonded device internal temperature. We apply this process to realize 1.55- $\mu \text{m}$ emitting vertical-cavity surface-emitting lasers. We demonstrate continuous wave operation from room temperature up to 55 °C, an internal temperature reduction of 13 °C, and we estimate a decrease of 30% of the overall device thermal impedance.
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