Abstract
A new bonding process for Si-wafer has been developed. The bonding is provided through intermediate layers such as Al or Au forming an eutectic alloy with silicon. A focused laser beam is used to heat up the contact site locally to temperatures well above the eutectic temperature of the corresponding alloys. Depending on the laser wavelength used the bond partner might be pyrex or silicon. This bonding process is especially suitable for bonding wafers containing devices with low temperature budget. The bonding strength of about 40 MPa is comparable to that of anodic bonding. The presented technique allows for a considerable reduction of the area needed for proper bonding. Furthermore, it provides for electrical contacts between the cap wafer and the device wafer so that new functions can be integrated into the cap.
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