Abstract
The authors tried to enhance the thermoelectric figure of merit of AgTlTe with extremely low thermal conductivity by controlling the carrier concentration. Pd- or Cu-doped AgTlTe was prepared and characterized. Pd did not dissolve in AgTlTe, whereas Cu fully dissolved up to x=0.4 in Ag1−xCuxTlTe. The effect of Cu doping was investigated by measuring the thermoelectric properties of polycrystalline Ag1−xCuxTlTe (x=0−0.4) from room temperature to slightly below the melting temperature. Cu doping resulted in a net increase in the hole concentration of AgTlTe. Cu doping improved the power factor of AgTlTe while keeping the thermal conductivity extremely low, leading to an enhancement of the thermoelectric figure of merit.
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