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https://doi.org/10.1016/0375-9601(83)90851-4
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Cite Journal: Physics Letters A |  Publication Date: Apr 1, 1983 |
 Citations: 5 |
Affiliation: Chiba University
Nb 3Ge films grown homoepitaxially onto Nb-rich A15 NbGe films have been prepared by the coevaporation method in UHV (<10 -6 Pa). These homoepitaxial films showed higher T c and lower lattice parameters in an extended range of composition, 22.8–27.0 at% Ge, compared with the films deposited directly onto sapphire substrates.
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