Abstract
A novel type of integrated InGaAsP superluminescent light source wasfabricated based on the tilted ridge-waveguide structure withselective-area quantum well (QW) intermixing. The bandgap structurealong the length of the device was modified by impurity free vacancydiffusion QW intermixing. The spectral width was broadened from the 16 nm ofthe normal devices to 37 nm of the QW intermixing enhanced devices at the sameoutput power level. High superluminescent power (210 mW) was obtainedunder pulsed conditions with a spectral width of 37 nm.
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