Abstract
The authors have studied the use of antimony for the optimization of the InAs∕GaAs(001) self-assembled quantum dot (QD) luminescence characteristics in the 1.3μm spectral region. The best results have been obtained by capping InAs QDs with 2 ML of GaSb grown on top of a 3 ML GaAs barrier separating the InAs and the GaSb layers. This results in an order of magnitude enhancement of the room temperature luminescence intensity at 1.3μm emission wavelength.
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