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Abstract
The goal of the study is to determine the value of magnetocapacitance under the substitution of lanthanum for bismuth in thin LaxBi1-xFeO3 films and to find out the effect of an external bias electric field on the magnetocapacitance effect. To solve this task, the dielectric permittivity, the magnetic permeability, and the loss tangent are measured in LaxBi1-xFeO3 films in magnetic fields of up to 8 kOe in the range of temperatures 100 K < T < 1000 K. Maxima of the permittivity and permeability at low temperatures and the dependence of the permeability on the prehistory of a sample are found. An increase in the magnetocapacitance due to the substitution of lanthanum for bismuth is observed. A giant enhancement of magnetocapacitance in an external electric bias field is revealed. These phenomena are attributed to the rearrangement of the domain structure.
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