Abstract
Dielectric measurements are performed on (Nb1/2In1/2)0.02Ti0.98O2 (NITO-2.0) single crystals grown by a floating zone method to address the nature of the colossal permittivity recently reported in (Nb + In) co-doped TiO2 ceramics. The colossal permittivity of the order of 105, which is also observed in the NITO-2.0 single crystals, disappears in the lowest temperature region, indicating an extrinsic contribution from thermally excited carriers to the colossal permittivity. Even at low temperatures where the thermally excited carriers are expected to be frozen out, a high permittivity of the order of 103 remains. This finding suggests that an intrinsic contribution from electron-pinned defect dipoles boosts the dielectric permittivity of TiO2.
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