Abstract
We tried the method to increase the peel strength between thin film metals and various substrate materials using saddle field fast atom beam (FAB) sources. It is notable that the peel strength was increased more than several times for all substrates than those who were not modified by surface activation using FAB irradiation. Highest peel strength was observed at the coupling of Si and metals in both case of Ar irradiation and SF6 reactive etching by FAB. This surface activation technique was applied to the fabrication of microelectrodes for the detection of mouse nerve signals. The process is expected as one of the available techniques for pre-treatment of the film deposition for several electrical devices.
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