Abstract
We tried the method to increase the peel strength between thin film metals and various substrate materials using saddle field fast atom beam (FAB) sources. It is notable that the peel strength was increased more than several times for all substrates than those who were not modified by surface activation using FAB irradiation. Highest peel strength was observed at the coupling of Si and metals in both case of Ar irradiation and SF6 reactive etching by FAB. This surface activation technique was applied to the fabrication of microelectrodes for the detection of mouse nerve signals. The process is expected as one of the available techniques for pre-treatment of the film deposition for several electrical devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
