Abstract
Using a cost-effective and simple sol-gel process, BiVO4 films and Zr4+-W6+ co-doped BVO films were prepared on Pt/Ti/SiO2/Si substrates. The influence of Zr4+-W6+ co-doped on the photovoltaic properties of the synthesized BiVO4 films was systematically investigated. When the doped amount of Zr4+-W6+ is 6%, the optical band gap of the film decreases from 2.58eV to 2.31eV. The increased strength of the built-in electric field of the films help to improve the separation of photogenerated charge carriers. The Zr4+-W6+ co-doped BiVO4 films demonstrated a significant increase in photocurrent density from 0.284mA/cm2 to 1.04mA/cm2. These findings highlight the potential of Zr4+-W6+ co-doped in advancing the performance of BiVO4-based photovoltaic materials and suggest avenues for future applications in solar energy devices.
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