Abstract
Tm-doped (AlxGa1−x)2O3 films were obtained on c-plane sapphire substrates at a substrate temperature of 500 °C by pulsed laser deposition. The bandgap of the films ranges from 4.8 to 7.3 eV, which can be obtained by changing the Al concentration xt in the target. As the Al concentration increases, the photoluminescence intensity of the Tm-related emissions at 456 and 797 nm increases, suggesting that an increase in the bandgap can improve the emission efficiency of Tm ions. When the Al concentration reaches 0.48, the ultraviolet (UV) emissions can be observed at 298, 356, and 394 nm, indicating that Tm-doped (AlxGa1−x)2O3 can be used as a candidate for UV applications. The results suggest that the Tm-doped (AlxGa1−x)2O3 films are promising materials for developing next-generation optoelectronic devices.
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