Abstract
Spin valves having thin oxide layers in the pinned and/or free layers were prepared by sputtering. MR ratios of the spin valves were increased from 8.1 to 11.9% by inserting the oxide layer into the pinned layer in Ta/PtMn/CoFe/Cu/CoFe/Ta spin valves. MR ratio of 13.9% and considerably large sheet Δ R of 2.55 Ω were obtained in the PtMn-based spin valves having the oxide layer in the pinned and free layer. Larger MR ratio of 17.3% and the sheet Δ R of 1.3 Ω were obtained in the PtMn-based dual-type spin valves having the oxide layer in both pinned layers. α-Fe 2O 3 based spin valves having thin oxide layers were also prepared. MR ratios of the spin valves were increased from 11.9 to 14.3% by inserting the oxide layer into the free layer in α-Fe 2O 3/CoFe/Cu/CoFe/Ta spin valves. The enhancement of the MR ratios may be attributed to the specular scattering effect of the conduction electrons by the thin oxide layers.
Published Version
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