Abstract
Influences of crystallinity in the precursor on metal-induced lateral crystallization of a-Si on SiO 2 have been investigated. It was found that the growth velocity during low temperature annealing (approx. 550 °C) could be enhanced by the pre-annealing treatment (300∼600 °C). This result triggered off the idea of MILC in multi-layered structure, i.e. a-Ge/a-Si/Ni-pattern/SiO 2. Utilization of this structure successfully enhanced MILC growth velocity. This is because crystal nucleation initiated in a-Ge modulated crystallinity in the precursor (a-Si). As a result, poly-Si with large grains (approx. 10 μm) was achieved in a short time annealing (<5 h). This will be a powerful tool to realize large poly-Si layers on insulating films for high efficiency solar cells and system-in-displays.
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