Abstract
Abstract Hybrid organic–inorganic semiconductor heterojunction with a sandwich structure have been prepared and studied. The inorganic semiconductor is n-type Porous Silicon (n-PS) elaborated on n-type crystalline silicon, the used conjugated polymer is the N,N′-diphenyl-N,N′-bis(1-naphthyl-pheny1)-(1,1′-biphenyl)-4,4′-diamine (NPB). Current–voltage ( I – V ) at transverse static magnetic field effect was used to study the electrical properties of the devices at room temperature. The electrical parameters such as the ideality factor ‘ n ’, the barrier height and the series resistance are determined from the I – V curve. We report the observed magneto-conductance (MC) in a weak magnetic field. The observed positive MC was enhanced when we partially filled pores with the NPB. This effect reaches up to 4.7% at a magnetic field of 0.8 T.
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