Abstract
GaN-based light-emitting diodes (LEDs) were fabricated by coating Al2O3 powder on a p-GaN and a semitransparent p-contact metal surface to increase the extraction probability of the internal reflected photons through the Al2O3 powder. The density of the ∼300-nm-diameter Al2O3 powder was about 1.9 ×1013 cm-2 on both surfaces. The forward voltages of the LEDs coated with Al2O3 powder on the p-GaN surface and the semitransparent p-contact metal surface were 4.15 and 3.42 V at 20 mA, respectively. The light output powers of both LED structures with Al2O3 powder coated on the p-GaN and semitransparent p-contact metal surfaces were increased by almost 30% compared with the conventional LED structure without Al2O3 powder coating.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
