Abstract
GaN-based light-emitting diodes (LEDs) were fabricated by coating Al2O3 powder on a p-GaN and a semitransparent p-contact metal surface to increase the extraction probability of the internal reflected photons through the Al2O3 powder. The density of the ∼300-nm-diameter Al2O3 powder was about 1.9 ×1013 cm-2 on both surfaces. The forward voltages of the LEDs coated with Al2O3 powder on the p-GaN surface and the semitransparent p-contact metal surface were 4.15 and 3.42 V at 20 mA, respectively. The light output powers of both LED structures with Al2O3 powder coated on the p-GaN and semitransparent p-contact metal surfaces were increased by almost 30% compared with the conventional LED structure without Al2O3 powder coating.
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