Abstract
As-grown MgB2 thin films on Si substrates with high Jc under magnetic fields were prepared by electron-beam evaporation. The value of Jc has been enhanced by the deposition of MgB2 thin film in an O2 atmosphere. The MgB2 thin film deposited in the O2 atmosphere (O2-doped film) has exhibited considerably higher Jc in magnetic fields among MgB2 thin films reported before. It has been found that the high Jc of the O2-doped film is attributable to the flux pinning with grain boundaries strengthened by an introduction of MgO along grain boundaries. In a high magnetic field, a peculiar behavior of E-J characteristics where E-J curves vary in two stages was observed. This behavior also originates from the flux pinning with strengthened grain boundaries.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
