Abstract
CdS nanowire/ZnO nanosphere materials (CdS/ZnO) with hierarchical structure were synthesized by a three-step solvothermal process. XRD, FESEM and TEM analysis confirmed the growth of ZnO nanospheres on the surface of CdS nanowires (NWs). The transient photovoltage (TPV) measurements revealed that the interface between CdS and ZnO can inhibit the recombination of photogenerated excess carriers and prolong the lifetime of excess carriers in CdS/ZnO materials. Moreover, the CdS/ZnO materials exhibit a dramatic improvement in optoelectronic performance and visible-light-irradiation gas sensing activity, which gave 1 order of magnitude larger than that of CdS NWs in response to formaldehyde. The enhancement of sensing properties is attributed to the interfacial transport of excess carriers.
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