Abstract
This article presents a more accurate method to extract the density of trap state (DOS T ) distribution from the experimental data of transient photo-voltage (TPV) measurement, by exploring the difficulties in the technique given by Wang et al. We give up the hypothesis of exponential type DOS T distribution in their theory and introduce the Gauss type distribution to replace it. Incorporating the multiple-trapping model and zero-temperature approximation, we put forward a more accurate DOS T distribution extraction method based on the TPV experimental result. Our theory predicts that the logarithm of carrier lifetime is a quadratic function of photo-voltage in the whole interval, which is consistent with the result given by TPV experiment.
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