Abstract

In this work, we propose a metal-assisted silicon strip waveguide design to improve the evanescent field ratio, which can be used in highly sensitive sensor applications. To prove the dominance of our proposed design, we make a reasonable comparison with the conventional silicon strip waveguide of similar geometry. In the structure of the metal-assisted waveguide, a thin SiO2 layer is sandwiched between the gold and the silicon strip waveguide. The transmission spectrum and E-field distribution of these structures are simulated using the 3D-finite element method. We have demonstrated the enhancement of the evanescent field in the upper cladding region of a straight strip waveguide which makes it an ideal candidate as an evanescent field gas absorption sensor.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.