Abstract
The electroluminescence performance of devices as enhanced by using ruthenium oxide as a hole injection layer (HIL) between indium-tin-oxide (ITO) anodes and 4,4′-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl and using alloy as a cathode. Both the HIL and the alloy were applied to organic light emitting diodes (OLEDs) on both glass and flexible substrates. The operation voltage at a current density of decreased from 14.7 to when the interlayer and cathode were applied to OLEDs on glass substrate. Also, the operation voltage reduced from 17.1 to for OLED on polyethylene terephthalate (PET) substrate. The maximum luminance value increased from 1510 to in OLEDs on glass substrate using the interlayer and cathode. Synchrotron radiation photoelectron spectroscopy results showed that core level of the spectra shifted toward higher binding energy when was deposited on -coated ITO/PET substrate. Secondary cutoff spectra revealed that the work function increased by when the interlayer was deposited on ITO/PET substrate. Thus, the interlayer lowered the potential barrier for hole injection, reducing the turn-on voltage of OLEDs and increasing the quantum efficiency.
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