Abstract
We report on the fabrication of bottom-gate thin-film transistors (TFTs) using indium-oxide (In2O3) thin films as active channel layers. The films were deposited on thermally grown silicon dioxide (SiO2)/n-type silicon (Si) at room temperature (RT) by radio-frequency (RF) magnetron sputtering. The effect of deposition pressure on the performance of In2O3-TFTs was investigated in detail. A significant improvement of the device performance was observed for In2O3-TFTs with the decrease of the working pressure, which is attributed to enhanced densification, better surface morphology of the In2O3 channel layers prepared at lower deposition pressure. The fabricated TFT with optimal device performance exhibited a field-effect mobility (μFE) of 31.6cm2V−1s−1, a drain current on/off ratio of ∼107, a low off drain current of about 10−10A and a threshold voltage of 7.8V. Good device performance and low processing temperature make the In2O3-TFTs suitable for the potential applications in the transparent electronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
