Abstract
The effect of further thermal annealing in a hydrogen atmosphere on the electrical properties of hydrazine-reduced graphene oxide (RGO) was investigated. It was found that heat treatment significantly improves the conductivity of RGO and reduces the room temperature resistivity by ten times. The changes become even more significant at the temperature decrease to 4.2 K and can exceed five orders. The variable range hopping conduction mechanism is the major charge transfer in the RGO at low temperatures for all annealing temperatures in the hydrogen of 100–800 °C. It is shown that the characteristic temperature T0 of the hopping transport exhibits an exponential decrease with an increase in the annealing temperature. Low-temperature studies of electric charge transfer reveal that the unified activation energy accompanying the improvement in conductivity is 0.3 eV.
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