Abstract
We investigated the effect of annealing in a hydrogen atmosphere on carbon nanocap formation during decomposition of a 6H-SiC(000-1) surface. It was determined that native oxides were reduced to below the detection limit of X-ray photoelectron spectroscopy after 30 min of annealing at 1200 degrees C in a hydrogen atomosphere at 10(-3) Pa. In addition, we found that the homogeneity of carbon nanocap size was improved on the SiC surface, compared with a sample annealed in ultra-high vacuum. This technique will be useful in the fabrication of homogeneous carbon nanotube layers by surface decomposition of SiC.
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