Abstract
The effects of addition of Si2 F6 to low-pressure chemical vapor deposition of W using WF6 and H2 was studied. Adding sufficient Si2 F6 gas enhances the deposition rate (RD ) of W film in the WF6 and H2 system by a factor of 2 over a wide range of deposition parameters, that is, the substrate temperature and the partial pressures of H2, WF6, and Si2 F6. W films deposited under the conditions where the enhancement of RD occurs have a resistivity as low as that of films deposited in the WF6 and H2 system, except for some W films exhibiting β-W structure, and have no Si contamination. The origin of the enhancement of RD by adding Si2 F6 is discussed.
Published Version
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