Abstract
In this work, we enhance the DC/AC resistive switching performance in AlOx memristors by using a two-technique bilayer approach. Compared to the single-layer memristors (W/AlOx or Al2O3/Pt), the dual-layer memristor (W/AlOx/AlOy/Pt) shows high uniformity in DC cycling (σ/μ < 0.12), large memory window in AC cycling (>100), fast switching speed (20 ns), high endurance (107 cycles), and high-temperature stability (104 s at 125 °C). These performance enhancements are attributed to the localization of the conductive region after using a dual layer with different defect concentrations. Moreover, the W/AlOx/AlOy/Pt memristor exhibits stable III-bit multilevel storage capability by varying the amplitude of negative pulses. Our results provide an effective strategy to develop high-performance memristors for future memory and computing applications.
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