Abstract
We have studied the electron and hole focusing problem observed in gallium nitride (GaN) based microcavity lasers. We outlined the relation between the focusing efficiency and the unbalance between electron and hole mobilities. A new device structure is proposed where the n-layer is on the top of the p-layer, which overcomes the focusing limitation of conventional GaN based vertical cavity surface emitting lasers and polariton lasers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
