Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

Abstract

We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n−-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n−-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n−-GaN drift layer and 3.0 μm-thick n−-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.