Abstract
As-grown and annealed undoped n type InAs single crystals have been studied by Hall effect measurement, infrared transmission (IR) spectroscopy, photoluminescence spectroscopy (PL) and glow discharge mass spectroscopy (GDMS). After annealing, below-gap infrared transmittance of the InAs single crystal increases significantly with the annihilation of a 0.383 eV PL peak related defect. Mechanism of the transmission enhancement and the attribution of the defect is discussed based on the experimental results.
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