Abstract
InAs single crystals grown by the liquid-encapsulated Czochralski (LEC) method and vertical gradient freezing (VGF) are studied by low-temperature photoluminescence spectroscopy, infrared transmission and reflectance spectroscopy, double-crystal x-ray diffraction and Hall effect measurement, respectively. A properly controlled etching solution is used to reveal beautiful square dislocation etch pits in the crystals. In addition to extremely low dislocation density, the concentration of native defects in the VGF-InAs single crystals is much lower than that in LEC-InAs, giving VGF-InAs better electrical and optical properties. The nature of the defects in InAs single crystals is discussed by considering the variation in stoichiometry and environment during the crystal growth processes.
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