Abstract
We have investigated the acceleration energy (0.5–2.0 MeV)-modulated electron irradiation effect of Au-induced lateral crystallization for amorphous Ge on SiO2. As a result, low-energy electron (≤1.0 MeV) irradiation was not effective for Au-induced lateral crystallization. On the other hand, when high-energy electron (2.0 MeV) irradiation was utilized, the lateral growth velocity was significantly enhanced (∼1.8 times). We have confirmed that the Au-induced lateral growth is enhanced by electron irradiation, which is due to the introduction of point defects into amorphous Ge, allowing the easy diffusion of Au atoms.
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