Abstract
Enhancement mode Al0.25Ga0.75As/In0.2Ga0.8As nanowire high electron mobility transistors (NW-HEMTs) are fabricated successfully by using selective wet etching and the depletion characteristic of a Schottky wrap gate (WPG). The devices exhibit very good modulation and saturation characteristics. For an NW-HEMT with an estimated channel width of 250 nm, the maximum transconductance is ~450 mS/mm at a drain voltage of 1.5 V.
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