Abstract
In2O3 thin films have been synthesized on glass substrates by spray pyrolysis then irradiated by electron beam (EB) at low energy of 0.8 MeV for three fluencies 4.1016, 35.1016 and 42.1016 electron/cm2. EB irradiation was performed by an industrial electron accelerator owned to COFICAB Company. Structural, optical, photoluminescence and morphological properties of In2O3 thin films have been investigated before and after EB irradiation by X-ray diffraction, spectrophotometer, SEM and fluorescence spectrometer. After EB irradiation at 4.1016 electron/cm2, the preferred orientation of In2O3 thin film was moved from (222) to (400) with a simultaneous improvement in grain size. For EB fluency of 35.1016 electron/cm2, In2O3 thin film has been strangely transformed from polycrystalline phase to a single crystal structure. After irradiation at 42.1016 electron/cm2 fluency, In2O3 thin film became amorphous. A clear enhancement in optical transmission has been observed after irradiation with a slight variation in band gap energy. Surface morphology of the irradiated In2O3 thin films has been transformed from rough to continuous, uniform and smooth surface. This study have shown that EB irradiation can be considered as a useful mean for enhancement of In2O3 thin films physical properties and suggest its use for the space optoelectronic applications.
Published Version
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