Abstract
The enhancement of the optical transition rate in (111)-oriented GaAs-AlGaAs quantum wells (QW's) compared with (100) QW's has been confirmed by photoluminescence. It is experimentally determined by absorption measurements of QW's that the anisotropy of the heavy-hole band in GaAs is extremely large; $\frac{{m}_{\mathrm{hh}}^{*}[111]}{{m}_{\mathrm{hh}}^{*}[100]}=2.65$. This large anisotropy in the host GaAs is considered to result in the higher optical transition rate in (111) QW's compared with (100) QW's.
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