Abstract
The LiNbO 3 [0 0 1] thin films were grown epitaxially on a sapphire [0 0 1] substrate by pulsed laser deposition. The influence of deposition parameters on the crystalline quality of films was studied. Good-quality films were obtained at a deposition temperature of 400 °C with an oxygen pressure of 50 Pa. The depositions at temperatures >450 °C, and at pressures higher as well as lower than 50 Pa, degrade crystalline quality due to the presence of thermal stresses and Li vacancies, respectively. As-deposited films were annealed with very slow rising and cooling rates (2 °C/h) at relatively low temperatures. The crystalline quality of thin films was enhanced greatly with annealing.
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