Abstract
Silicon thin films was successfully deposited on glass and Teflon substrates at room temperature by using radiofrequency (RF) magnetron sputtering. The effect of deposition pressure on crystallinity and structural properties of the thin films on glass and Teflon substrates was studied. From Raman spectroscopy results it showed that the highest peak was around 512 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> on Teflon substrate indicating the existing of poly-Si phase. The crystalline quality of the Si films improved with the increasing sputtering pressure, for films deposited on Teflon substrates. While, the crystalline quality of the films on glass substrates deteriorated with the increasing sputtering pressure. The different on surface roughness and thermal conductivity for both glass and Teflon substrates contribute on the different crystallinity for both substrates.
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