Abstract
ZnO thin films were synthesized by a facile electrodeposition method in the aqueous solution. Porous ZnO thin films with wurtzite structure could be achieved by mean of annealing treatment. The growth mechanism of the porous ZnO thin film was discussed. The intensity of the E 2 mode in the ZnO thin film, which represents crystalline quality of the thin film increases with the increasing of annealing temperature. Optical properties indicate that annealing temperature has strong effect on the optical band gap value and defect concentrations. Both the green and yellow emissions corresponding to respective oxygen vacancies and oxygen interstitials can be identified. The results show that ZnO annealed at 400 °C exhibits a significant photocurrent density enhancement which is about 18 times larger than that of the as-deposited ZnO thin films. The mechanism of the enhanced photoresponse for the ZnO thin film has been discussed in detail.
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