Abstract
We have investigated the structural and transport properties of InAlGaN/AlN/GaN heterostructures grown on Si substrates. By depositing the AlN spacer layer at a low temperature after the growth interruption, the surface morphology and interface quality have been significantly improved. Electron mobilities of 1620 cm2/Vs at room temperature and 8260 cm2/Vs at 77 K are achieved while delivering a high electron sheet density of about 2.0 × 1013 cm−2, resulting in an extremely low sheet resistance of 186 Ω/□ at room temperature and 37 Ω/□ at 77 K. The experimental results evidence that it is the high interface quality that contributes to the improvement of electron transport properties. Our results provide an effective approach to obtain high quality InAlGaN/GaN heterostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
