Abstract
Mg3Sb2 shows poor comprehensive thermoelectric properties mainly because its conductivity is very poor, despite it has very low thermal conductivity. Excess Mg combined with small amount of Te doping can control carrier type and carrier concentration. The semiconductor and metallic transport mechanism coordinate to control the electrical transport characteristics and improve the electrical transport performance. The lattice thermal conductivity of Mg3Sb2 decreases after Te doping. The maximum ZT value is 0.78 for Mg3.2Sb1.99Te0.01 at 773 K.
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